onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883

RS Stock No.: 867-3287Brand: onsemiManufacturers Part No.: TF412ST5G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-883

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

4pF

Dimensions

1.08 x 0.68 x 0.41mm

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+150 °C

Length

1.08mm

Height

0.41mm

Width

0.68mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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£ 0.19

Each (In a Pack of 50) (ex VAT)

onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883
Select packaging type

£ 0.19

Each (In a Pack of 50) (ex VAT)

onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
50 - 200£ 0.19£ 9.50
250 - 950£ 0.10£ 5.00
1000 - 2450£ 0.08£ 4.00
2500+£ 0.08£ 4.00

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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-883

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

4pF

Dimensions

1.08 x 0.68 x 0.41mm

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+150 °C

Length

1.08mm

Height

0.41mm

Width

0.68mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.