Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
8 V
Package Type
MCPH
Mounting Type
Surface Mount
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
16 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.6 x 0.85mm
Country of Origin
China
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P.O.A.
3000
P.O.A.
3000
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Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
8 V
Package Type
MCPH
Mounting Type
Surface Mount
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
16 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.6 x 0.85mm
Country of Origin
China