onsemi MJD31C1G NPN Transistor, 3 A, 100 V, 4-Pin IPAK
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 2.38 x 6.22mm
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P.O.A.
75
P.O.A.
75
Ideate. Create. Collaborate
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Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 2.38 x 6.22mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products