onsemi FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

RS Stock No.: 864-8821Brand: ON SemiconductorManufacturers Part No.: FGD3N60LSDTM
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Technical documents

Specifications

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

40 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

onsemi FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
Select packaging type

P.O.A.

onsemi FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

40 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more