N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 onsemi FDMS4D0N12C

RS Stock No.: 178-4251Brand: onsemiManufacturers Part No.: FDMS4D0N12C
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

120 V

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

106 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

36 nC @ 6 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

Philippines

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£ 3.27

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 onsemi FDMS4D0N12C

£ 3.27

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 onsemi FDMS4D0N12C
Stock information temporarily unavailable.

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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

120 V

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

106 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

36 nC @ 6 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

Philippines