Technical documents
Specifications
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
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P.O.A.
Production pack (Tape)
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P.O.A.
Production pack (Tape)
5
Technical documents
Specifications
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C