N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KW

RS Stock No.: 805-1135Brand: onsemiManufacturers Part No.: 2N7002KW
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.92mm

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.2mm

Minimum Operating Temperature

-55 °C

Product details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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£ 0.17

Each (Supplied as a Tape) (ex VAT)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KW
Select packaging type

£ 0.17

Each (Supplied as a Tape) (ex VAT)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KW
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Tape
100 - 900£ 0.17£ 17.00
1000 - 2900£ 0.14£ 14.00
3000 - 8900£ 0.12£ 12.00
9000+£ 0.12£ 12.00

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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.92mm

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.2mm

Minimum Operating Temperature

-55 °C

Product details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.