Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
30 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
Production pack (Tube)
10
P.O.A.
Production pack (Tube)
10
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
30 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.