Technical Documents
Specifications
Brand
MicrochipProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
800mA
Maximum Collector Emitter Voltage Vceo
50V dc
Package Type
UBC
Mount Type
Surface
Minimum Operating Temperature
-55°C
Transistor Polarity
NPN
Maximum Operating Temperature
200°C
Pin Count
3
Standards/Approvals
No
Series
2N2222A
Automotive Standard
No
Product Details
The Microchip Radiation Hardened NPN Silicon Switching Transistor is a 3 pin small signal BJT designed for high reliability applications in radiation prone environments. With a voltage rating of 40V, current capacity of 800mA, and power dissipation of 500mW, it provides efficient switching performance. This transistor is specifically engineered to withstand radiation exposure, making it ideal for use in space, military, and other demanding applications where durability and stable operation are critical.
Stock information temporarily unavailable.
€ 416.88
€ 8.508 Each (In a Box of 49) (ex VAT)
49
€ 416.88
€ 8.508 Each (In a Box of 49) (ex VAT)
Stock information temporarily unavailable.
49
Technical Documents
Specifications
Brand
MicrochipProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
800mA
Maximum Collector Emitter Voltage Vceo
50V dc
Package Type
UBC
Mount Type
Surface
Minimum Operating Temperature
-55°C
Transistor Polarity
NPN
Maximum Operating Temperature
200°C
Pin Count
3
Standards/Approvals
No
Series
2N2222A
Automotive Standard
No
Product Details
The Microchip Radiation Hardened NPN Silicon Switching Transistor is a 3 pin small signal BJT designed for high reliability applications in radiation prone environments. With a voltage rating of 40V, current capacity of 800mA, and power dissipation of 500mW, it provides efficient switching performance. This transistor is specifically engineered to withstand radiation exposure, making it ideal for use in space, military, and other demanding applications where durability and stable operation are critical.