Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
132 A
Maximum Drain Source Voltage
250 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Typical Gate Charge @ Vgs
364 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
5.7mm
Country of Origin
Germany
Product details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 944.71
€ 47.235 Each (In a Tube of 20) (ex VAT)
20
€ 944.71
€ 47.235 Each (In a Tube of 20) (ex VAT)
20
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Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
132 A
Maximum Drain Source Voltage
250 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Typical Gate Charge @ Vgs
364 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
5.7mm
Country of Origin
Germany
Product details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS