IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
96 A
Maximum Drain Source Voltage
200 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
145 nC @ 10 V
Width
5.3mm
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 11.92
€ 11.92 Each (ex VAT)
Standard
1
€ 11.92
€ 11.92 Each (ex VAT)
Standard
1
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| quantity | Unit price |
|---|---|
| 1 - 4 | € 11.92 |
| 5 - 19 | € 11.15 |
| 20 - 49 | € 10.68 |
| 50 - 99 | € 9.26 |
| 100+ | € 8.98 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
96 A
Maximum Drain Source Voltage
200 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
145 nC @ 10 V
Width
5.3mm
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products