Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1

RS Stock No.: 284-792Brand: InfineonManufacturers Part No.: ISZ15EP15LMATMA1
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

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Stock information temporarily unavailable.

€ 11.56

€ 0.578 Each (In a Pack of 20) (ex VAT)

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
Select packaging type

€ 11.56

€ 0.578 Each (In a Pack of 20) (ex VAT)

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
20 - 180€ 0.578€ 11.56
200 - 480€ 0.578€ 11.56
500 - 980€ 0.531€ 10.62
1000 - 1980€ 0.507€ 10.15
2000+€ 0.472€ 9.44

Ideate. Create. Collaborate

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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more