Infineon CoolMOS™ P6 Dual N-Channel MOSFET Transistor & Diode, 109 A, 650 V, 3-Pin TO-247 IPW60R099P6XKSA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ P6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.099 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4..5V
Number of Elements per Chip
2
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€ 15.48
€ 7.741 Each (In a Pack of 2) (ex VAT)
2
€ 15.48
€ 7.741 Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
2
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | € 7.741 | € 15.48 |
| 10 - 18 | € 7.068 | € 14.14 |
| 20 - 48 | € 6.714 | € 13.43 |
| 50 - 98 | € 6.396 | € 12.79 |
| 100+ | € 6.018 | € 12.04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ P6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.099 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4..5V
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products