Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
80 V
Package Type
HSOF
Mounting Type
Surface Mount
Pin Count
8 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.1mm
Typical Gate Charge @ Vgs
178 nC @ 10 V
Width
10.58mm
Number of Elements per Chip
1
Height
2.4mm
Series
IPT012N08N5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
2000
P.O.A.
2000
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
80 V
Package Type
HSOF
Mounting Type
Surface Mount
Pin Count
8 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.1mm
Typical Gate Charge @ Vgs
178 nC @ 10 V
Width
10.58mm
Number of Elements per Chip
1
Height
2.4mm
Series
IPT012N08N5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V