Infineon OptiMOS™ 3 N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
150 V
Package Type
TO-220
Series
OptiMOS™ 3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
214 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 17.37
€ 4.342 Each (In a Pack of 4) (ex VAT)
Standard
4
€ 17.37
€ 4.342 Each (In a Pack of 4) (ex VAT)
Standard
4
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 16 | € 4.342 | € 17.37 |
| 20 - 36 | € 4.177 | € 16.71 |
| 40 - 96 | € 4.083 | € 16.33 |
| 100 - 196 | € 3.965 | € 15.86 |
| 200+ | € 3.752 | € 15.01 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
150 V
Package Type
TO-220
Series
OptiMOS™ 3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
214 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products