Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm
€ 13.10
€ 6.549 Each (In a Pack of 2) (ex VAT)
2
€ 13.10
€ 6.549 Each (In a Pack of 2) (ex VAT)
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | € 6.549 | € 13.10 |
10 - 18 | € 6.325 | € 12.65 |
20 - 48 | € 5.617 | € 11.23 |
50 - 98 | € 5.275 | € 10.55 |
100+ | € 4.944 | € 9.89 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm