Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1

RS Stock No.: 110-9095Brand: InfineonManufacturers Part No.: IPG20N06S4L26ATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

33 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+175 °C

Length

5.15mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

5.9mm

Transistor Material

Si

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

0.75mm

Series

OptiMOS

Product details

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1
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P.O.A.

Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

33 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+175 °C

Length

5.15mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

5.9mm

Transistor Material

Si

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

0.75mm

Series

OptiMOS

Product details

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more