N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK Infineon IPD053N08N3GATMA1

RS Stock No.: 170-2283Brand: InfineonManufacturers Part No.: IPD053N08N3GATMA1
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

80 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.36mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

52 nC @ 10 V

Height

2.41mm

Series

IPD053N08N3 G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

£ 1.32

Each (On a Reel of 2500) (ex VAT)

N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK Infineon IPD053N08N3GATMA1

£ 1.32

Each (On a Reel of 2500) (ex VAT)

N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK Infineon IPD053N08N3GATMA1
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

80 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.36mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

52 nC @ 10 V

Height

2.41mm

Series

IPD053N08N3 G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V