Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
£ 0.75
Each (In a Pack of 10) (ex VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Select packaging type
10
£ 0.75
Each (In a Pack of 10) (ex VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | £ 0.75 | £ 7.50 |
100 - 240 | £ 0.74 | £ 7.40 |
250 - 490 | £ 0.72 | £ 7.20 |
500 - 990 | £ 0.70 | £ 7.00 |
1000+ | £ 0.45 | £ 4.50 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC