N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1

RS Stock No.: 171-1943Brand: InfineonManufacturers Part No.: IPB180N10S402ATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

10.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

156 nC @ 10 V

Height

4.4mm

Series

IPB180N10S4-02

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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P.O.A.

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1
Select packaging type

P.O.A.

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1
Stock information temporarily unavailable.
Select packaging type

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

10.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

156 nC @ 10 V

Height

4.4mm

Series

IPB180N10S4-02

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V