Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
191 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
€ 2.124
Each (In a Pack of 5) (ex VAT)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Select packaging type
Standard
5
€ 2.124
Each (In a Pack of 5) (ex VAT)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 2.124 | € 10.62 |
50 - 120 | € 1.959 | € 9.79 |
125 - 245 | € 1.841 | € 9.20 |
250 - 495 | € 1.746 | € 8.73 |
500+ | € 1.628 | € 8.14 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
191 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC