Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
191 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
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Please check again later.
Stock information temporarily unavailable.
€ 1.31
Each (On a Reel of 800) (ex VAT)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
800
€ 1.31
Each (On a Reel of 800) (ex VAT)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Stock information temporarily unavailable.
800
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
191 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2