Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14

RS Stock No.: 284-864Brand: InfineonManufacturers Part No.: IMYH200R024M1HXKSA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

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Stock information temporarily unavailable.

€ 134.53

€ 134.53 Each (ex VAT)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
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Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 134.53
2€ 269.06
3€ 403.60
4€ 538.13
5€ 672.66
6€ 807.19
7€ 941.72
8€ 1,076.25
9€ 1,210.79
10€ 1,230.50
11€ 1,353.55
12€ 1,476.60
13€ 1,599.66
14€ 1,722.71
15€ 1,845.76

€ 134.53

€ 134.53 Each (ex VAT)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 134.53
2€ 269.06
3€ 403.60
4€ 538.13
5€ 672.66
6€ 807.19
7€ 941.72
8€ 1,076.25
9€ 1,210.79
10€ 1,230.50
11€ 1,353.55
12€ 1,476.60
13€ 1,599.66
14€ 1,722.71
15€ 1,845.76

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9€ 134.53
10+€ 123.05

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more