Infineon FS25R12W1T4B11BOMA1 3 Phase Bridge IGBT Module, 45 A 1200 V AG-EASY1B-1, Panel Mount

RS Stock No.: 178-1383Brand: InfineonManufacturers Part No.: FS25R12W1T4B11BOMA1
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Technical documents

Specifications

Maximum Continuous Collector Current

45 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

205 W

Package Type

AG-EASY1B-1

Configuration

3 Phase Bridge

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

3 Phase

Dimensions

33.8 x 48 x 12mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Germany

Product details

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Infineon FS25R12W1T4B11BOMA1 3 Phase Bridge IGBT Module, 45 A 1200 V AG-EASY1B-1, Panel Mount

P.O.A.

Infineon FS25R12W1T4B11BOMA1 3 Phase Bridge IGBT Module, 45 A 1200 V AG-EASY1B-1, Panel Mount
Stock information temporarily unavailable.

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Technical documents

Specifications

Maximum Continuous Collector Current

45 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

205 W

Package Type

AG-EASY1B-1

Configuration

3 Phase Bridge

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

3 Phase

Dimensions

33.8 x 48 x 12mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Germany

Product details

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.