Technical documents
Specifications
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.47mm
Length
4.97mm
Maximum Operating Supply Voltage
3.6 V
Width
3.98mm
Height
1.47mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 17.77
€ 8.885 Each (In a Pack of 2) (ex VAT)
Standard
2
€ 17.77
€ 8.885 Each (In a Pack of 2) (ex VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | € 8.885 | € 17.77 |
10 - 18 | € 7.163 | € 14.32 |
20 - 98 | € 7.092 | € 14.18 |
100 - 498 | € 7.021 | € 14.04 |
500+ | € 6.95 | € 13.90 |
Technical documents
Specifications
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.47mm
Length
4.97mm
Maximum Operating Supply Voltage
3.6 V
Width
3.98mm
Height
1.47mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.