N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6433XTMA1

RS Stock No.: 826-9317Brand: InfineonManufacturers Part No.: BSS123NH6433XTMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Width

1.3mm

Transistor Material

Si

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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£ 0.12

Each (On a Reel of 500) (ex VAT)

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6433XTMA1

£ 0.12

Each (On a Reel of 500) (ex VAT)

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6433XTMA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
500 - 500£ 0.12£ 60.00
1000 - 2000£ 0.08£ 40.00
2500 - 4500£ 0.08£ 40.00
5000 - 12000£ 0.06£ 30.00
12500+£ 0.06£ 30.00

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Width

1.3mm

Transistor Material

Si

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.