Infineon BFS481H6327XTSA1 Dual NPN Transistor, 12 V, 6-Pin SOT-363
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
175 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
Each (In a Pack of 10) (ex VAT)
10
P.O.A.
Each (In a Pack of 10) (ex VAT)
10
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Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
175 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products