Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
25 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
25 V
Maximum Emitter Base Voltage
2.5 V
Maximum Operating Frequency
2.5 GHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
250
P.O.A.
250
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
25 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
25 V
Maximum Emitter Base Voltage
2.5 V
Maximum Operating Frequency
2.5 GHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Product details