N-Channel MOSFET Tetrode, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BF999E6327HTSA1

RS Stock No.: 178-7400Brand: InfineonManufacturers Part No.: BF999E6327HTSA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Width

1.3mm

Number of Elements per Chip

1

Height

0.9mm

Typical Power Gain

27 dB

Product details

Infineon Dual-gate MOSFET Tetrode

Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET Tetrode, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BF999E6327HTSA1

P.O.A.

N-Channel MOSFET Tetrode, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BF999E6327HTSA1
Stock information temporarily unavailable.

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Width

1.3mm

Number of Elements per Chip

1

Height

0.9mm

Typical Power Gain

27 dB

Product details

Infineon Dual-gate MOSFET Tetrode

Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.