Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 34.81
€ 0.696 Each (Supplied as a Tape) (ex VAT)
Production pack (Tape)
50
€ 34.81
€ 0.696 Each (Supplied as a Tape) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tape)
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Tape |
|---|---|---|
| 50 - 90 | € 0.696 | € 6.96 |
| 100 - 490 | € 0.696 | € 6.96 |
| 500 - 990 | € 0.673 | € 6.73 |
| 1000+ | € 0.673 | € 6.73 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details


