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Diodes Inc P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 DMP3056LDM-7

RS Stock No.: 751-4262PBrand: DiodesZetexManufacturers Part No.: DMP3056LDM-7
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

21.1 nC @ 10 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

€ 42.48

€ 0.283 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 DMP3056LDM-7
Select packaging type

€ 42.48

€ 0.283 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 DMP3056LDM-7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
150 - 725€ 0.283€ 7.08
750 - 1475€ 0.26€ 6.49
1500+€ 0.236€ 5.90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

21.1 nC @ 10 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more