Technical documents
Specifications
Brand
ams OSRAMSpectrums Detected
Infrared
Wavelength of Peak Sensitivity
850nm
Package Type
TO-18
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
2
Diode Material
Si
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
1100nm
Typical Fall Time
0.012µs
Width
5.5mm
Diameter
4.8mm
Typical Rise Time
0.012µs
Short Circuit Current
10µA
Polarity
Positive
Product details
PIN Photodiode - TO-18 Package
The BPX 65 PIN photodiode, from OSRAM Opto Semiconductors, are in TO-18 metal can packages. The metal can is hermetically sealed, making the BPX 65 ideal for applications in harsh environments up to 125°C. Other suitable applications include industrial electronics, high speed photo detectors and for control/drive circuits.
Features of the BPX 65 silicon PIN photodiode:
TO-18 metal can package
Through-hole mounting
Wavelength: 350 to 1100 nm
Short switching time
IR Photodiodes, OSRAM Opto Semiconductors
€ 547.99
€ 4.567 Each (In a Tray of 120) (ex VAT)
120
€ 547.99
€ 4.567 Each (In a Tray of 120) (ex VAT)
120
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Technical documents
Specifications
Brand
ams OSRAMSpectrums Detected
Infrared
Wavelength of Peak Sensitivity
850nm
Package Type
TO-18
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
2
Diode Material
Si
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
1100nm
Typical Fall Time
0.012µs
Width
5.5mm
Diameter
4.8mm
Typical Rise Time
0.012µs
Short Circuit Current
10µA
Polarity
Positive
Product details
PIN Photodiode - TO-18 Package
The BPX 65 PIN photodiode, from OSRAM Opto Semiconductors, are in TO-18 metal can packages. The metal can is hermetically sealed, making the BPX 65 ideal for applications in harsh environments up to 125°C. Other suitable applications include industrial electronics, high speed photo detectors and for control/drive circuits.
Features of the BPX 65 silicon PIN photodiode:
TO-18 metal can package
Through-hole mounting
Wavelength: 350 to 1100 nm
Short switching time