Technical documents
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
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P.O.A.
Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Toshiba SSM3J356R,LF(T
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Production pack (Reel)
50
P.O.A.
Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Toshiba SSM3J356R,LF(T
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Technical documents
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon