N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR

RS Stock No.: 177-6585Brand: ROHMManufacturers Part No.: RQ6C050UNTR
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Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

20 V

Series

RQ6C050UN

Package Type

TSMT-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Width

1.8mm

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Thailand

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P.O.A.

N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

P.O.A.

N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR
Stock information temporarily unavailable.

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

20 V

Series

RQ6C050UN

Package Type

TSMT-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Width

1.8mm

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more