Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Number of Elements per Chip
2
Transistor Material
Si
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
3000
P.O.A.
3000
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Number of Elements per Chip
2
Transistor Material
Si
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details