Infineon OptiMOS™ 5 N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB049N08N5ATMA1

RS Stock No.: 215-2495Brand: InfineonManufacturers Part No.: IPB049N08N5ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.049 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Transistor Material

Si

Number of Elements per Chip

1

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€ 1,357.00

€ 1.357 Each (On a Reel of 1000) (ex VAT)

Infineon OptiMOS™ 5 N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB049N08N5ATMA1

1000

Available in multiples of 1000
1000€ 1,357.00
2000€ 2,714.00
3000€ 4,071.00
4000€ 5,428.00
5000€ 6,785.00
6000€ 8,142.00
7000€ 9,499.00
8000€ 10,856.00
9000€ 12,213.00
10000€ 13,570.00
11000€ 14,927.00
12000€ 16,284.00
13000€ 17,641.00
14000€ 18,998.00
15000€ 20,355.00

€ 1,357.00

€ 1.357 Each (On a Reel of 1000) (ex VAT)

Infineon OptiMOS™ 5 N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB049N08N5ATMA1

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000€ 1,357.00
2000€ 2,714.00
3000€ 4,071.00
4000€ 5,428.00
5000€ 6,785.00
6000€ 8,142.00
7000€ 9,499.00
8000€ 10,856.00
9000€ 12,213.00
10000€ 13,570.00
11000€ 14,927.00
12000€ 16,284.00
13000€ 17,641.00
14000€ 18,998.00
15000€ 20,355.00

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.049 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more