Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 169.33
€ 3.387 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
50
€ 169.33
€ 3.387 Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
50
Stock information temporarily unavailable.
quantity | Unit price | Per Tube |
---|---|---|
50 - 120 | € 3.387 | € 16.93 |
125 - 245 | € 3.245 | € 16.22 |
250 - 495 | € 3.174 | € 15.87 |
500+ | € 2.915 | € 14.57 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Country of Origin
China
Product details