STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7.2 A, 500 V, 3-Pin TO-220FP STP9NK50ZFP
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
32 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 9.32
€ 1.864 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 9.32
€ 1.864 Each (In a Pack of 5) (ex VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | € 1.864 | € 9.32 |
| 10 - 95 | € 1.581 | € 7.91 |
| 100 - 495 | € 1.263 | € 6.31 |
| 500 - 995 | € 1.074 | € 5.37 |
| 1000+ | € 0.909 | € 4.54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
32 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products