Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
€ 9.56
€ 0.956 Each (In a Pack of 10) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Select packaging type
Standard
10
€ 9.56
€ 0.956 Each (In a Pack of 10) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
10
Stock information temporarily unavailable.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | € 0.956 | € 9.56 |
100 - 240 | € 0.932 | € 9.32 |
250 - 490 | € 0.909 | € 9.09 |
500 - 990 | € 0.885 | € 8.85 |
1000+ | € 0.578 | € 5.78 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC