Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS™
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
5.35mm
Length
6.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
€ 16.22
€ 0.649 Each (Supplied on a Reel) (ex VAT)
25
€ 16.22
€ 0.649 Each (Supplied on a Reel) (ex VAT)
25
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS™
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
5.35mm
Length
6.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C