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Diodes Inc Dual N/P-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK DMG4511SK4-13

RS Stock No.: 885-5482PBrand: DiodesZetexManufacturers Part No.: DMG4511SK4-13
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Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

9.3 A, 9.6 A

Maximum Drain Source Voltage

35 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

8.9 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

2

Length

6.7mm

Typical Gate Charge @ Vgs

18.7 nC @ 10 V, 19.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

€ 44.84

€ 0.448 Each (Supplied on a Reel) (ex VAT)

Diodes Inc Dual N/P-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK DMG4511SK4-13
Select packaging type

€ 44.84

€ 0.448 Each (Supplied on a Reel) (ex VAT)

Diodes Inc Dual N/P-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK DMG4511SK4-13
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
100 - 480€ 0.448€ 8.97
500 - 980€ 0.425€ 8.50
1000+€ 0.378€ 7.55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

9.3 A, 9.6 A

Maximum Drain Source Voltage

35 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

8.9 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

2

Length

6.7mm

Typical Gate Charge @ Vgs

18.7 nC @ 10 V, 19.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more