Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 95.58
€ 1.912 Each (In a Tube of 50) (ex VAT)
50
€ 95.58
€ 1.912 Each (In a Tube of 50) (ex VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 1.912 | € 95.58 |
100 - 450 | € 1.51 | € 75.52 |
500 - 950 | € 1.286 | € 64.31 |
1000 - 4950 | € 1.097 | € 54.87 |
5000+ | € 1.05 | € 52.51 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details