Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 145.73
€ 2.915 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
€ 145.73
€ 2.915 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
50 - 120 | € 2.915 | € 14.57 |
125 - 245 | € 2.679 | € 13.39 |
250 - 495 | € 2.561 | € 12.80 |
500+ | € 2.431 | € 12.15 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details