Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 97.94
€ 0.979 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
100
€ 97.94
€ 0.979 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
100 - 180 | € 0.979 | € 19.59 |
200 - 480 | € 0.909 | € 18.17 |
500 - 980 | € 0.743 | € 14.87 |
1000+ | € 0.696 | € 13.92 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details