Semikron Danfoss SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
260 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS3
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 329.77
€ 329.77 Each (ex VAT)
1
€ 329.77
€ 329.77 Each (ex VAT)
1
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 1 | € 329.77 |
| 2 - 4 | € 294.88 |
| 5 - 9 | € 272.34 |
| 10 - 19 | € 259.66 |
| 20+ | € 246.09 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
260 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS3
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products