Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3

RS Stock No.: 814-1323PBrand: VishayManufacturers Part No.: SISS27DN-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.3mm

Typical Gate Charge @ Vgs

92 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.78mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 120.36

€ 0.602 Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
Select packaging type

€ 120.36

€ 0.602 Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
200 - 480€ 0.602€ 12.04
500 - 980€ 0.531€ 10.62
1000 - 1980€ 0.472€ 9.44
2000+€ 0.378€ 7.55

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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.3mm

Typical Gate Charge @ Vgs

92 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.78mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more