Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 4.31
€ 0.861 Each (In a Pack of 5) (ex VAT)
5
€ 4.31
€ 0.861 Each (In a Pack of 5) (ex VAT)
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | € 0.861 | € 4.31 |
| 50 - 95 | € 0.578 | € 2.89 |
| 100 - 195 | € 0.555 | € 2.77 |
| 200 - 395 | € 0.555 | € 2.77 |
| 400+ | € 0.555 | € 2.77 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products