Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 105.96
€ 5.298 Each (Supplied in a Bag) (ex VAT)
Production pack (Bag)
20
€ 105.96
€ 5.298 Each (Supplied in a Bag) (ex VAT)
Production pack (Bag)
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Bag |
---|---|---|
20 - 38 | € 5.298 | € 10.60 |
40 - 72 | € 4.732 | € 9.46 |
74 - 148 | € 4.543 | € 9.09 |
150+ | € 4.496 | € 8.99 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
Country of Origin
China
Product details