onsemi N-Channel MOSFET, 49 A, 60 V, 3-Pin DPAK NVD5C668NLT4G
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Series
NVD5C668NL
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Automotive Standard
AEC-Q101
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 121.54
€ 2.431 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
€ 121.54
€ 2.431 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 95 | € 2.431 | € 12.15 |
| 100 - 495 | € 2.148 | € 10.74 |
| 500 - 995 | € 1.912 | € 9.56 |
| 1000+ | € 1.77 | € 8.85 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Series
NVD5C668NL
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Automotive Standard
AEC-Q101
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products