Infineon CoolMOS™ C3 N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220 FP SPA11N60C3XKSA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220 FP
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.65mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.85mm
Height
9.83mm
Minimum Operating Temperature
-55 °C
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 135.11
€ 2.702 Each (In a Tube of 50) (ex VAT)
50
€ 135.11
€ 2.702 Each (In a Tube of 50) (ex VAT)
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 2.702 | € 135.11 |
| 100 - 200 | € 2.608 | € 130.39 |
| 250+ | € 2.478 | € 123.90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220 FP
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.65mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.85mm
Height
9.83mm
Minimum Operating Temperature
-55 °C
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products